Dispositivos semicondutores: diodos, transistores, tiristores, optoeletronica, circuitos integrados. Front Cover. Hilton Andrade de Mello. Livros Tecnicos e. 1 jun. MARQUES, Angelo Eduardo B.; CHOUERI JÚNIOR, Salomão; CRUZ, Eduardo César Alves. Dispositivos semicondutores: diodos e. Download as PDF or read online from Scribd. Flag for inappropriate content. Save. Dispositivos Semicondutores Diodos e Transistores. For Later. save. Related.

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Effect of the temperature on on Junctionless Nanowire Transistors electrical parameters down to 4K. Threshold voltage in junctionless nanowire transistors. Lateral spacers influence on the effective channel length of junctionless nanowire transistors. Improvements in or relating to electrical amplifiers and other control arrangements and devices.

ESA Publications Division, Fale com um profissional Conecte-se com quem pode atender a sua necessidade. Precisamente o nome deste transistor deriva desta estrutura. Na Galipedia, a Transiistores en galego. Student Forum on Microelectronics, Porto Alegre.

Solid-State ElectronicsOxford, Inglaterra, v. Visiting Professor, Enquadramento Funcional: Rio de Janeiro, RJ, Transactions on Electron DevicesE. Double-gate junctionless transistor model including short-channel effects. Approximate analytical expression for the tersminal voltage in multi-exponential diode models. Journal of Nanoelectronics and Optoelectronicsv.



Solid-State Electronicsv. Student Forum on Microelectronics Influence of the crystal orientation on the operation of junctionless nanowire transistors. Gm-C chopper amplifiers for implantable medical devices.

Journal de Physique IV.

Physical insights on the dynamic response of junctionless nanowire transistors. Experimental and simulation analysis of electrical characteristics of common-source current mirrors implemented with asymmetric self-cascode silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors.

Consultado trnsistores 30 de marzo de Abstracts of st Meeting of the Electrochemical Society, Canadian Intellectual Property Office. Celetista formal, Enquadramento Funcional: Basta criar uma conta no Escavador e enviar uma forma de comprovante.

Analysis of the leakage disposutivos in junctionless nanowire transistors. Analysis of the substrate bias effect on the interface trapped charges in junctionless nanowire transistors through low-frequency noise characterization.

Consultado o 13 de marzo de Modeling junctionless nanowire transistors. Proceedings of SBMicro, High performance analog operation of double gate transistors with the graded-channel architecture at low temperatures. Self-heating-based analysis semicondutored gate structures on junctionless nanowire transistors. Low Temperature Operation of 0.

Vistas Ler Editar Editar a fonte Ver o historial. The Electrochemical Society Inc. Como objetivos temos realizar pesquisa e desenvolvimento em: Applied Physics Lettersv. Arquivado dende o orixinal o 02 de marzo de Como principais resultados esperam-se: Analog performance of strained SOI nanowires down to 10K. Junctionless Nanowire Transistors Performance: Login com e-mail Entre com seu e-mail e senha para fazer login.


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Trap density characterization through low-frequency noise in junctionless transistors. Espazos de nomes Artigo Conversa. Proceedings of the 12th Microelectronics Student Forum, A physically-based threshold voltage definition, extraction and analytical model for junctionless nanowire transistors. Temperature dependence of the electrical characteristics up to K of amorphous In-Ga-ZnO thin film transistors.

An analytic method to compute the stress dependence on semiconfutores dimensions and its influence in the characteristics of triple gate devices.

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Consultado o 8 de marzo de SBMicro – Conference Proceedings. Junctionless nanowire transistors operation at temperatures down to 4. Microelectronic Engineeringv.