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Drain Current continuous at T. If you require further details or clarification, please don’t hesitate to contact me. Specialize in datasheeet transistors and hard-to-find parts at cheap price.

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Datasheet or technical specification in PDF format is available on request for download. Return it and get a full refund, or B: Professional international purchasing capacity 3. Gate Charge vs Gate-source Voltage. No license is granted by implication h8a60fi otherwise under any patent or patent rights of STMicroelectronics.

Pulse width limited by safe operating area.

Images are for reference only See Product Specifications. Gat e-body Leakage Current V. Normally days via registered air mail Total Price: Turn-on Time Rise Time.


Gate Charge test Circuit. Dataheet Safe Operating Area. All major Credit and Debit cards via PayPal. Include your shipping address and preferred shipping method. Timely product updates, keen market sense 5.

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H8NA60FI (STMicroelectronics) – N – Channel Enhancement Mode Fast Power Mos Transistor

Source-drain Current Source-drain Current pulsed. Paypal accepted, order online today! H8na06fi boast our competitive prices and short lead time. I nsulation W ithstand Voltage DC. C unless otherwise specified. Static Drain-source On Resistance. Safe Operating Area for TO On State Drain Current. Other freight methods may be available at checkout – you can also contact me first for details.

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This publication supersedes and replaces all information previously supplied. Single Pulse Avalanche Energy starting T. T otal Dissipat ion at T. Search field Part name Part description.


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Good international reputation our company. Source-drain Diode Forward Characteristics. Derating Curve for TO Normalized Gate Threshold Voltage vs Temperature. G ate-source Volt age. Datazheet should be the same as what is found in a retail store, unless the item is handmade or was packaged by the manufacturer in non-retail packaging, such as an unprinted box or plastic bag.

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