H8NA60FI DATASHEET PDF

H8NA60FI Datasheet PDF Download – STH8NA60FI, H8NA60FI data sheet. H8NA60FI NTE Equvilent NTE POWER MOSFET N-CHANNEL V ID- 14A TO-3P CASE HIGH SPEED SWITCH. NTE Data Sheet Data Sheet. NTE. H8NA60FI Datasheet: N – CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR, H8NA60FI PDF Download STMicroelectronics, H8NA60FI.

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Drain Current continuous at T. If you require further details or clarification, please don’t hesitate to contact me. Specialize in datasheeet transistors and hard-to-find parts at cheap price.

Specification mentioned in this publication are subject to change without notice. All parts are brand new with original packaging.

Datasheet or technical specification in PDF format is available on request for download. Return it and get a full refund, or B: Professional international purchasing capacity 3. Gate Charge vs Gate-source Voltage. No license is granted by implication h8a60fi otherwise under any patent or patent rights of STMicroelectronics.

Pulse width limited by safe operating area.

Images are for reference only See Product Specifications. Gat e-body Leakage Current V. Normally days via registered air mail Total Price: Turn-on Time Rise Time.

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Gate Charge test Circuit. Dataheet Safe Operating Area. All major Credit and Debit cards via PayPal. Include your shipping address and preferred shipping method. Timely product updates, keen market sense 5.

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H8NA60FI is able to ship same day. Turn-off Drain-source Voltage Slope. If you don’t receive the item in 25 days, just let us know,a new package vatasheet replacement will be issued.

Items will be shipped within business days of payment. We have won the affirmation of international markets for good prices, fast delivery and guaranteed quantity. Normalized On Resistance vs Temperature.

H8NA60FI (STMicroelectronics) – N – Channel Enhancement Mode Fast Power Mos Transistor

Source-drain Current Source-drain Current pulsed. Paypal accepted, order online today! H8na06fi boast our competitive prices and short lead time. I nsulation W ithstand Voltage DC. C unless otherwise specified. Static Drain-source On Resistance. Safe Operating Area for TO On State Drain Current. Other freight methods may be available at checkout – you can also contact me first for details.

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This publication supersedes and replaces all information previously supplied. Single Pulse Avalanche Energy starting T. T otal Dissipat ion at T. Search field Part name Part description.

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(PDF) H8NA60FI Datasheet download

Good international reputation our company. Source-drain Diode Forward Characteristics. Derating Curve for TO Normalized Gate Threshold Voltage vs Temperature. G ate-source Volt age. Datazheet should be the same as what is found in a retail store, unless the item is handmade or was packaged by the manufacturer in non-retail packaging, such as an unprinted box or plastic bag.

We sincerely look forward to establishing business relationship with you in the future. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.

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