AT45DB642D DATASHEET PDF

Please refer to data sheets for detailed information. To select how PB3 and PB4 should be used, the jumpers labeled PB3 and PB4 must be set correctly. Description. The AT45DBD is a volt, dual-interface sequential access Flash memory ideally suited for a wide variety of digital voice-, image-, program. Explore the latest datasheets, compare past datasheet revisions, and confirm part Datasheet for AT45DBD-CNUReel AT45DBD-CNU-SL

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AT45DB642D Datasheet PDF

Main Memory Page Read Opcode: The information in this document is provided in connection with Atmel datasheett. Being able to reprogram the Sector Protection Register with the sector protection enabled allows the user to temporarily disable the sector protection to an individual sector rather than dis- abling sector protection completely.

Other algorithms can be used to rewrite portions of the Flash array.

To perform a buffer to main memory page program with built-in erase for the Read Operations The following block diagram and waveforms illustrate the various read sequences available. Page 53 Packaging Information Main Memory Page to Buffer 1 or 2 Compare 7.

Standard parts are shipped with the page size set to bytes. Command Sector Lockdown Figure The busy status indicates that the Flash memory array and one of the buffers cannot be accessed; read and write operations to the other buffer can still be performed.

AT45DB642D-TU

To allow for simple in-system reprogrammability, the AT45DBD does not require high input voltages for programming. Main Memory Page datashewt Buffer 1 or 2 Transfer 6. Master clocks in BYTE h last output byte. The user is able to configure these parts to a byte page size if desired.

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AT45DBD-CNU Suppliers

Slave clocks out BYTE a first output byte. AC Waveforms Six different timing waveforms are shown below. Please contact Atmel for the estimated availability of devices with the fix.

The status of whether or not sector protection has been enabled or disabled by either the software or the hardware controlled methods can be deter- mined by checking the Status Register. Auto Page Rewrite Group C commands consist of: The algorithm above shows the programming of a single page. Deep Power-down, the fatasheet will return to the normal standby mode. Memory Array To provide optimal flexibility, the memory array of the AT45DBD is divided darasheet three levels of granularity comprising of sectors, blocks, and pages.

The algorithm at45sb642d be repeated sequentially for each page within the entire array. To perform a contin- uous read with the page size set to bytes, the opcode, 03H, at45vb642d be clocked into the device followed by xatasheet address bytes A22 – A Page 39 Utilizing the RapidS To take advantage of the RapidS function’s ability to operate at higher clock frequencies, a full at5db642d cycle must be used to transmit data back and forth across the serial bus.

The device density is indicated using bits and 2 of the status register. Configuration Register is a user-programmable nonvolatile datashheet ter that allows the page size of the main memory to be configured for binary page size bytes or standard DataFlash page size bytes. Page 21 Figure For the AT45DBD, the four bits are The decimal value of these four binary bits does not equate to the device density; the four bits represent a combinational code relating to differing densities of DataFlash devices This type of algorithm is used for applications in which the entire array is programmed sequentially, filling the array page-by- page page can be written using either a Main Memory Page Program operation or a Buffer Write operation followed by a Buffer to Main Memory Page Program operation.

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PUW Changed t from max Parts ordered with suffix SL are shipped in bulk with the page size set to bytes.

The entire main memory can be erased at one time by using the Chip Erase command. The DataFlash is designed to Use Block Erase opcode 50H alternative.

AT45DBD-TU Atmel, AT45DBD-TU Datasheet

Fixed tim- ing is not recommended. Unless otherwise specified tolerance: The first 13 bits PA12 – PA0 of the bit address sequence specify which page of the main memory array to read, and the last 11 bits BA10 – BA0 of the bit address sequence specify the starting byte address within the page.

The Block Erase function is not dtasheet by the Chip Erase issue. The device operates from a single power supply, 2. Master clocks in BYTE a.