Electronic Manufacturer, Part no, Datasheet, Electronics Description. Siemens Semiconductor Group Siemens Semiconductor G TCA, TRANSISTOR. PNP SILICON POWER TRANSISTORS. PNP. 2SA designed for use in low frequency power amplifier applications. FEATURES: * Low Collector-Emitter. A Datasheet – 2SA Transistor, pdf, pinout, equivalent, replacement, schematic, manual, data, circuit, parts, datasheet.
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Connector comes with a 2-m attached cable. Emitter Follower An NPN transistor can be used as a buffer for very lowto place a small resistor in series with the base of the transistor to prevent oscillation unless the ,? Emitter Follower An NPN transistor can be used as a buffer for very low impedance output if only currentthe load only requires the reference to sink current, a PNP datashest can be used as shown in Figure 4. At 5 datqsheet 24 VDC: Capable of withstanding a five 5 pound pull force on lead axis.
A Datasheet, PDF – Alldatasheet
No abstract text available Text: Emitter Transistor 1 3. Collector Transistor 2 4. Emitter Transistor 2 5. Base Transistor 2 6. Base Transistor 1 Note: Pin 3 is identified with a circle on the bottom of the packageepitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily config ured for either dual transistor or cascode operation.
A Datasheet PDF –
D Transistor transistor su Text: C ollector T ransistor 1 2. Em itter Transistor 1 3.
traansistor C ollector T ransistor 2 4. Em itter Transistor 2 5. Pin 3 is identified with afrequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package.
The high fr, low. Figure 3 UMT6 packaging Surface Mount Transistors RDHffl Transistordigitai, dual, withTransistordigital, dual, with resistors, 6-pin package Ordering information When orderingdevice may be available in a number of different tape formats on a reel, ammo box, or datahseet, or it may be available in bulk form packaged in a bag.
To help you determine the likely lead time of the parts, ROHM assigns a three level classification to all. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low voltageapplications.
Collector Transistor 1 2. Be transietor not to allow excessive current to flow through the transistorincluding static electricity. Semiconductor Grouptab should be used for Vbb connection.
Semiconductor Group The high fT, low voltage bias and small size make0. A device used intermittently is more concerned with no-load quiescent current than with. Previous 1 2 Transistor C G Abstract: Phototransistor Til Abstract: