2N Specifications: Polarity: NPN ; Package Type: TO, 3 PIN. Details, datasheet, quote on part number: 2N Symbol. Parameter. Value. Unit. 2N 2N VCEO. Collector-Emitter Voltage (IE = 0). V. VCEV. Collector-Emitter Voltage (VBE = V). V. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may.

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Modern 2N datasheets often, but not always, specify f T of 2. RCA by had changed their specification to give 2.

Views Read Edit View history. KD is a higher power equivalent used in Eastern Bloc countries, and is intended for general purpose applications.

New Jersey Semiconductor 2NN datasheet pdf

An MJ PNPwhich is also manufactured using the epitaxial process today, is a complementary transistor to the 2N By using this site, you agree to the Terms of Use and Privacy Policy. Also the higher frequency response has improved performance when used in audio amplifiers.

It often has a transition frequency of around 3. The art of electronics 2nd ed. Commons category link from Wikidata. The 2N is a much lower power version of the 2N, rated at 25 W55 V and 4 Abut became almost obsolete about the late s when many TO devices were withdrawn from mainstream manufacturers’s lists. Graf; William Sheets The historically-significant 2N was designed by Herb Meisel’s engineering group with RCA; it was the first multi-amp silicon power transistor to sell for less than one dollar, and became an industry workhorse standard.

Although the original 2N went into decline relative to epitaxial-base transistors because of high manufacturing costs, the epitaxial-base version continued to be used in both linear amplifiers and switching supplies.


The 2Nwith a TO-3 case has slightly lower gain but significantly higher maximum ratings W, Vceo, 16 Amps. The exact performance characteristics depend on the manufacturer and date; before the move to the epitaxial base version in the mids the f T could be as low as 0. The robot builder’s bonanza 2nd ed. KD are packaged in a TO-3 case style called T41 by Teslait is a 20 amp80 voltwatt power transistor.

Retrieved 31 October Sometimes the V CBO breakdown voltage the maximum voltage between collector and base, with the emitter open, an unrealistic arrangement in practical circuits is given as the only voltage rating, which can cause confusion.

This page was last edited on 22 Novemberat Modern successors to the 2N can be much more suitable in fast-switching circuits or high-end audio power amplifiers. The frequency at which gain begins to drop off may be much lower, see below. The KD have higher power and higher current than 2N It was second sourced by other manufacturers; Texas Instruments listed a single-diffused mesa version of the device in an August datasheet.

The device is designed to operate with an efficient heatsink, but care must be taken to mount the device properly, [7] [8] [9] else physical damage or worsened power handling may result, especially with cases or heatsinks that are not perfectly flat. It was produced exclusively by the Czechoslovakian electronics company Tesla. Since the early s, the 2N transistor has been heavily targeted by counterfeiters, who substitute much smaller silicon dies with lesser power ratings, use inferior mounting techniques, and fake the markings.

2N 데이터시트(PDF) – New Jersey Semi-Conductor Products, Inc.

It has a transition frequency of 2. Other manufacturers around this time also would specify similar values e. 2n30035 7 November In the sixties and early seventies, Philips produced similar devices encapsulated in TO-3 packages under the reference BDY20 described as being for “hifi” purposes and BDY38 although the BDY38 has lower voltage ratings than the 2N With changes to semiconductor manufacturing technology, the original process became economically uncompetitive in the mids, and a similar device was created using epitaxial base technology.


The 2N, 2N, and 2N devices, for example, which date back to the s but have been improved, are datwsheet useful in new designs and are still popular for experimenters.

2N3035 Datasheet, Equivalent, Cross Reference Search

Nevertheless, a 2N and many other power transistors originating from this era cannot be assumed to have great high-frequency performance n23035 there can be degradation of phase-shift and open-loop gain even within the audio frequency range. Build your own low-power transmitters: It is by now unlikely to actually obtain a genuine 2N datawheet when using popular sales platforms such as Amazon or Ebay; classic electronics distributors are dagasheet still able to properly source them. The maximum collector-to-emitter voltage for the 2N, like other transistors, depends on the resistance path the external circuit provides between the base and emitter of the transistor; with ohms a 70 volt breakdown rating, V CERand the Collector-Emitter Sustaining voltage, V CEO susis given by ON Semiconductor.

The total power dissipation written P D in most American datasheets, P tot in European ones depends on the heatsink to which the 2N is connected. In other projects Wikimedia Commons. Retrieved from ” https: From Wikipedia, the free encyclopedia. With an “infinite” heatsink, that is: